Characterizations of InN Thin Films Grown on Si (110) Substrate by Reactive Sputtering
Indium nitride (InN) thin films were deposited onto Si (110) by reactive sputtering and pure In target at ambient temperature. The effects of the Ar–N2 sputtering gas mixture on the structural properties of the films were investigated by using scanning electron microscope, energy-dispersive X-ray...
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| 主要な著者: | , , , |
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| フォーマット: | 論文 |
| 言語: | English |
| 出版事項: |
Hindawi Publishing Corporation
2011
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| 主題: | |
| オンライン･アクセス: | http://eprints.usm.my/38434/1/Characterizations_of_InN_Thin_Films_Grown_on_Si.pdf http://eprints.usm.my/38434/ https://doi.org/10.1155/2011/579427 |
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