High Sensitivity of Porous Si-Doped GaN MSM Photodetector using Thermally Untreated Platinum Contact

• المؤلفون الرئيسيون: Mahmood, Ainorkhilah, Hassan,, Zainuriah, Ahmed, Naser M., Yushamdan, Yushamdan
• التنسيق: Conference or Workshop Item
• اللغة: English
• منشور في: 2015
• الموضوعات: Q Science (General)
• الوصول للمادة أونلاين: http://eprints.usm.my/48410/1/Section%20C%20149.pdf%20cut.pdf; http://eprints.usm.my/48410/

In this work, we report the formation of porous Si-doped GaN films under a novel alternating current (sine-wave a.c. (50 Hz)) photo-assisted electrochemical (ACPEC) etching conditions. The ACPEC formed porous GaN with excellent structural and surface morphology. Field emission scanning electron m...