Fabrication of Porous GaN using Bottom-Up Approached through Electron Beam Evaporator for High Efficient Devices

• المؤلفون الرئيسيون: Samsudin, M. E. A., Zainal, N., Hassan, Z.
• التنسيق: Conference or Workshop Item
• اللغة: English
• منشور في: 2015
• الموضوعات: QC1-999 Physics
• الوصول للمادة أونلاين: http://eprints.usm.my/48738/1/Section%20C%20159.pdf%20cut.pdf; http://eprints.usm.my/48738/

In recent years, the use of porous semiconductor has become an alternative way in reducing the impact of lattice mismatch and propagation of threading dislocations into the overgrown layer. Porous GaN materials have been considered as one of the most promising materials for optoelectronic applica...