Fabrication And Characterization Of Light Emitting Diode Based On N-Zno Nanorods Grown Via A Low-Temperature Method On P-GaN
In this work, we report the fabrication of a near-ultraviolet (UV) light emitting (LED) device based on the growth of n-ZnO nanorod (NRs) arrays on the p-GaN layer/sapphire substrate heterostructure using the low-cost hydrothermal technique. Morphological, structural and optical properties of the as...
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主要な著者: | , , , , , , |
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フォーマット: | Conference or Workshop Item |
言語: | English |
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2019
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オンライン・アクセス: | http://eprints.usm.my/48873/1/ICoSeMT%202019%20ABSTRACT%20BOOK%20150.pdf http://eprints.usm.my/48873/ |
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