A phenomenological approach to the calculation of the diffusion coefficient for Si on Si(111) using classical trajectories
A general method to calculate a lower bound and an estimated upper bound for the surface diffusion coefficient from jump frequencies of an adatom from one absorption site to another has been formulated. This method has been applied to the surface diffusion of Si on Si(111). Keating's potential...
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| Main Authors: | , , |
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| 格式: | Article |
| 语言: | English |
| 出版: |
American Institute of Physics (AIP)
1985
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| 主题: | |
| 在线阅读: | http://irep.iium.edu.my/35865/1/JCP1985.pdf http://irep.iium.edu.my/35865/ http://scitation.aip.org/content/aip/journal/jcp/82/3/10.1063/1.448429 |
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