Dependency of electrical characteristics on nano gap variation in pinch off lateral gate transistors

• Main Authors: Larki, Farhad, Dehzangi, Arash, Md. Ali, Sawal Hamid, Jalar @ Jalil, Azman, Islam, Md. Shabiul, Yeop Majlis, Burhanuddin, Saion, Elias, Hamidon, Mohd Nizar, Hutagalung, Sabar D.
• 格式: Conference or Workshop Item
• 语言: English
• 出版: IEEE 2014
• 在线阅读: http://psasir.upm.edu.my/id/eprint/55922/1/Dependency%20of%20electrical%20characteristics%20on%20nano%20gap%20variation%20in%20pinch%20off%20lateral%20gate%20transistors.pdf; http://psasir.upm.edu.my/id/eprint/55922/

The variation of electrical characteristics with nano size air gap variation between gates and channel of a pinch off lateral gate transistor were investigated using 3D Technology Computer Aided Design. It is found that smaller nanosize gaps which can be formed by approaching the lateral gates to th...