Fabrication of Lateral Polysilicon Gap of Less than 50nm Using Conventional Lithography

• Main Authors: Dhahi, Th. S., Hashim, U., Ali, M. E., Ahmed, N. M., Nazwa, T.
• 格式: Article
• 语言: English
• 出版: Hindawi Publishing Corporation 2011
• 主题: QC1-999 Physics
• 在线阅读: http://eprints.usm.my/39098/1/Fabrication_of_Lateral_Polysilicon_Gap_of_Less_than_50%E2%80%89nm_Using_Conventional_Lithography.pdf; http://eprints.usm.my/39098/; https://doi.org/10.1155/2011/250350

We report a thermal oxidation process for the fabrication of nanogaps of less than 50 nmin dimension.Nanogaps of this dimension are necessary to eliminate contributions from double-layer capacitance in the dielectric detection of protein or nucleic acid. The method combines conventional photolitho...