Fabrication of Lateral Polysilicon Gap of Less than 50nm Using Conventional Lithography

• المؤلفون الرئيسيون: Dhahi, Th. S., Hashim, U., Ali, M. E., Ahmed, N. M., Nazwa, T.
• التنسيق: مقال
• اللغة: English
• منشور في: Hindawi Publishing Corporation 2011
• الموضوعات: QC1-999 Physics
• الوصول للمادة أونلاين: http://eprints.usm.my/39098/1/Fabrication_of_Lateral_Polysilicon_Gap_of_Less_than_50%E2%80%89nm_Using_Conventional_Lithography.pdf; http://eprints.usm.my/39098/; https://doi.org/10.1155/2011/250350

We report a thermal oxidation process for the fabrication of nanogaps of less than 50 nmin dimension.Nanogaps of this dimension are necessary to eliminate contributions from double-layer capacitance in the dielectric detection of protein or nucleic acid. The method combines conventional photolitho...