Enhancing Performance of Porous Si-Doped GaN based MSM Photodetector Using AC Technique

• المؤلفون الرئيسيون: Mahmood, Ainorkhilah, Hassan, Zainuriah, Rahim, Alhan Farhanah Abd, Radzali, Rosfariza, Ahmed, Naser M.
• التنسيق: Conference or Workshop Item
• اللغة: English
• منشور في: 2017
• الموضوعات: QC1-999 Physics
• الوصول للمادة أونلاين: http://eprints.usm.my/48832/1/ZH17_OP07.pdf%20done.pdf; http://eprints.usm.my/48832/

In this work, we report the formation of porous Si-doped GaN films under a novel alternating current (sine-wave a.c. (50 Hz)) photo-assisted electrochemical etching (ACPEC) conditions. The formation of porous Si-doped GaN by the novel ACPEC is performed in the same electrolyte concentration (4% KOH)...