Enhancing Performance of Porous Si-Doped GaN based MSM Photodetector Using AC Technique

In this work, we report the formation of porous Si-doped GaN films under a novel alternating current (sine-wave a.c. (50 Hz)) photo-assisted electrochemical etching (ACPEC) conditions. The formation of porous Si-doped GaN by the novel ACPEC is performed in the same electrolyte concentration (4% KOH)...

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Main Authors: Mahmood, Ainorkhilah, Hassan, Zainuriah, Rahim, Alhan Farhanah Abd, Radzali, Rosfariza, Ahmed, Naser M.
格式: Conference or Workshop Item
语言:English
出版: 2017
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在线阅读:http://eprints.usm.my/48832/1/ZH17_OP07.pdf%20done.pdf
http://eprints.usm.my/48832/
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