Effects Of V/III Ratio Of InGaN Quantum Well On The Properties Of Near Ultraviolet Light Emitting Diodes

• 主要な著者: Sahar, Mohd Ann Amirul Zulffiqal Md, Hassan, Zainuriah, Sha, Shiong Ng, Way, Foong Lim, Khai, Sheen Lau, Alias, Ezzah A., Ahmad, Mohd Anas, Hamzah, Nur Atiqah, Asri, Rahil Izzati Mohd
• フォーマット: Conference or Workshop Item
• 言語: English
• 出版事項: 2020
• 主題: QC1-999 Physics
• オンライン･アクセス: http://eprints.usm.my/48948/1/MNRG_ZH01.pdf; http://eprints.usm.my/48948/

In this work, indium gallium nitride (InGaN) based near ultraviolet light emitting diode (NUV-LED) has been grown on a 2-inch c-plane patterned sapphire substrate at atmospheric pressure using metal organic chemical vapor deposition (MOCVD). The attention was paid to the effects of the V/III ratio o...