The Role Of Growth Temperature On The Indium Incorporation Process For Mocvd Growth Of InGaN/GaN Heterostructures

• Main Authors: Yusof, Ahmad Sauffi, Hassan, Zainuriah, Hamady, Sidi, Ng, Sha Shiong, Ahmad, Mohd Anas, Way, Foong Lim, Fressengeas, Nicolas, Chevallier, Christyves
• 格式: Conference or Workshop Item
• 語言: English
• 出版: 2020
• 主題: QC1-999 Physics
• 在線閱讀: http://eprints.usm.my/49065/1/ABSTRACT%20BOOK%20MNRG%202020.pdf%20cut%2058.pdf; http://eprints.usm.my/49065/

This work presents the effect of growth temperature on the evolution of indium incorporation and growth process of InGaN/GaN heterostructures grown using Taiyo Nippon Sanso Corporation (TNSC) metal organic chemical vapor deposition (MOCVD) SR4000-HT system. The InGaN/GaN heterostructures were epita...