Doping effect numerical comparison of band gap energy and active region range for GaN and GaAs based semiconductor

• المؤلفون الرئيسيون: Ahmad Fajri, Faris Azim, Ahmad Noorden, Ahmad Fakhrurrazi, Abdul Aziz, Azni
• التنسيق: مقال
• اللغة: English; English
• منشور في: IOP Publishing 2021
• الموضوعات: QC Physics
• الوصول للمادة أونلاين: http://irep.iium.edu.my/114344/1/114344_Doping%20effect%20numerical%20comparison%20of%20band%20gap%20energy.pdf; http://irep.iium.edu.my/114344/7/114344_Doping%20effect%20numerical%20comparison%20of%20band%20gap%20energy_Scopus.pdf; http://irep.iium.edu.my/114344/; https://iopscience.iop.org/issue/1742-6596/1892/1

This work reports the effect of doping concentration on the energy-band structure of semiconductor materials. The research focuses on the resultant values of bandgap energy and its depletion region (length/area), based on the initial concentrations of doping which are the donors and acceptors. Th...