Doping effect numerical comparison of band gap energy and active region range for GaN and GaAs based semiconductor

• Main Authors: Faris Azim Ahmad Fajri, Faris Azim, Ahmad Fakhrurrazi, Ahmad Noorden, Azni, Abdul Aziz
• 格式: Conference or Workshop Item
• 语言: English; English
• 出版: Institute of Physics Publishing 2021
• 主题: QC Physics
• 在线阅读: http://irep.iium.edu.my/73957/8/73957_Doping%20effect%20numerical%20comparison%20of%20band%20gap%20energy%20and%20active_SCOPUS.pdf; http://irep.iium.edu.my/73957/9/73957_Doping%20effect%20numerical%20comparison%20of%20band%20gap%20energy%20and%20active.pdf; http://irep.iium.edu.my/73957/; https://iopscience.iop.org/article/10.1088/1742-6596/1892/1/012031/pdf

This work reports the effect of doping concentration on the energy-band structure of semiconductor materials. The research focuses on the resultant values of bandgap energy and its depletion region (length/area), based on the initial concentrations of doping which are the donors and acceptors. The e...