Improved performance of InGaN/GaN LED by optimizing the properties of the bulk and interface of ITO on p-GaN

• المؤلفون الرئيسيون: Zahir, Norhilmi Mohd, Talik, Noor Azrina, Harun, Hazmi Naim, Kamarundzaman, Anas, Tunmee, Sarayut, Nakajima, Hideki, Chanlek, Narong, Shuhaimi, Ahmad, Abd Majid, Wan Haliza
• التنسيق: مقال
• منشور في: Elsevier 2021
• الموضوعات: QC Physics
• الوصول للمادة أونلاين: http://eprints.um.edu.my/25889/; https://doi.org/10.1016/j.apsusc.2020.148406

Indium Tin Oxide films were deposited directly on p-type Gallium Nitride film using the electron beam deposition method at different substrate temperatures from 25 °C to 550 °C. The structural, optical and Hall measurements represent a direct correlation of ITO properties with the substrate temperat...