Enhancement Of Efficiency Of GaN-On-GaN Led By Wet Etching Roughening On N-Face GaN Substrate

• المؤلفون الرئيسيون: Alias, Ezzah A., Samsudin, Muhammad Esmed Alif, Denbaars, Steven P., Speck, James S., Nakamura, Shuji, Zainal, Norzaini
• التنسيق: Conference or Workshop Item
• اللغة: English
• منشور في: 2020
• الموضوعات: QC1-999 Physics
• الوصول للمادة أونلاين: http://eprints.usm.my/48942/1/MNRG_NZ03.pdf; http://eprints.usm.my/48942/

It is well-known that GaN-on-GaN LEDs have lower dislocation density compared to GaN-on-sapphire LEDs. Nonetheless, the overall efficiency of the GaN-on-GaN LEDs is still lower than the GaN-on-sapphire LEDs. The problem is associated to total internal reflection effect which is higher in the LEDs. T...