Growth of Gallium Nitride (GaN) on Aluminium Nitride Surfaces Grown by Electron-Beam Evaporator

• المؤلفون الرئيسيون: Fikri, Z. M., Zainal,, N., Ibrahim, K.
• التنسيق: Conference or Workshop Item
• اللغة: English
• منشور في: 2015
• الموضوعات: QC1-999 Physics
• الوصول للمادة أونلاين: http://eprints.usm.my/48769/1/Section%20C%20162.pdf%20cut.pdf; http://eprints.usm.my/48769/

In this work, we have successfully grown a GaN layer by electron beam (e-beam) evaporator on aluminium nitride (AIN) layers using sapphire substrate. The AIN layers were prepared by molecular beam epitaxy (MBE) 1) directly on sapphire and 2) on GaN/sapphire MOCVD template. After the ebeam evapora...