Optimization of Post-Annealing Treatment Conditions on GaN Layer Grown on m-Plane Sapphire Substrate by Electron Beam Evaporator

• 主要な著者: Ariff, A., Zainal,, N., Hassan,, Z., Ibrahim, K.
• フォーマット: Conference or Workshop Item
• 言語: English
• 出版事項: 2015
• 主題: QC1-999 Physics
• オンライン･アクセス: http://eprints.usm.my/48772/1/Section%20C%20164.pdf%20cut.pdf; http://eprints.usm.my/48772/

This paper describes the effect of using different conditions of post-annealing treatment on properties of GaN layer grown on m-plane sapphire by electron beam (e-beam) evaporator. Prior to the annealing, the surface of the grown GaN was found to be smooth with some agglomerations of its grains i...