Growth of Gallium Nitride (GaN) on Aluminium Nitride Surfaces Grown by Electron-Beam Evaporator

• Main Authors: Fikri, Z. M., Zainal,, N., Ibrahim, K.
• 格式: Conference or Workshop Item
• 語言: English
• 出版: 2015
• 主題: QC1-999 Physics
• 在線閱讀: http://eprints.usm.my/48769/1/Section%20C%20162.pdf%20cut.pdf; http://eprints.usm.my/48769/

In this work, we have successfully grown a GaN layer by electron beam (e-beam) evaporator on aluminium nitride (AIN) layers using sapphire substrate. The AIN layers were prepared by molecular beam epitaxy (MBE) 1) directly on sapphire and 2) on GaN/sapphire MOCVD template. After the ebeam evapora...