Growth of Gallium Nitride (GaN) on Aluminium Nitride Surfaces Grown by Electron-Beam Evaporator
In this work, we have successfully grown a GaN layer by electron beam (e-beam) evaporator on aluminium nitride (AIN) layers using sapphire substrate. The AIN layers were prepared by molecular beam epitaxy (MBE) 1) directly on sapphire and 2) on GaN/sapphire MOCVD template. After the ebeam evapora...
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| Main Authors: | , , |
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| 格式: | Conference or Workshop Item |
| 语言: | English |
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2015
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| 在线阅读: | http://eprints.usm.my/48769/1/Section%20C%20162.pdf%20cut.pdf http://eprints.usm.my/48769/ |
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