Effect Of Nucleation Time On GaN Layer Grown On Different Shape Of Patterned Sapphire Substrate

• المؤلفون الرئيسيون: Taib, Muhamad Ikram Md, Zaini, Siti Nurul Waheeda Mohmad, Zainal, Norzaini
• التنسيق: Conference or Workshop Item
• اللغة: English
• منشور في: 2020
• الموضوعات: QC1-999 Physics
• الوصول للمادة أونلاين: http://eprints.usm.my/49045/1/ABSTRACT%20BOOK%20MNRG%202020.pdf%20cut%2050.pdf; http://eprints.usm.my/49045/

This work describes the effect of nucleation time on GaN layer; which was grown separately on three different shape of patterned sapphire substrate (PSS); cone PSS and dome PSS. Prior to the GaN layer growth, a low temperature of GaN nucleation layer was initially grown at 40, 80 and 160 second. Th...