Optimization of Post-Annealing Treatment Conditions on GaN Layer Grown on m-Plane Sapphire Substrate by Electron Beam Evaporator
This paper describes the effect of using different conditions of post-annealing treatment on properties of GaN layer grown on m-plane sapphire by electron beam (e-beam) evaporator. Prior to the annealing, the surface of the grown GaN was found to be smooth with some agglomerations of its grains i...
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| Main Authors: | , , , |
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| 格式: | Conference or Workshop Item |
| 語言: | English |
| 出版: |
2015
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| 主題: | |
| 在線閱讀: | http://eprints.usm.my/48772/1/Section%20C%20164.pdf%20cut.pdf http://eprints.usm.my/48772/ |
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