Innovative Developments in GaN-based Technology
GaN-based materials have been intensively investigated in recent years because of their potential applications for optoelectronic devices operating in the short wavelength spectral range and in high power, and high temperature electronic devices. The III-nitride semiconductors form a continuous allo...
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| フォーマット: | Conference or Workshop Item |
| 言語: | English |
| 出版事項: |
2016
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| オンライン･アクセス: | http://eprints.usm.my/48801/1/ZO8.pdf%20done.pdf http://eprints.usm.my/48801/ |
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