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Innovative Developments in GaN-based Technology

GaN-based materials have been intensively investigated in recent years because of their potential applications for optoelectronic devices operating in the short wavelength spectral range and in high power, and high temperature electronic devices. The III-nitride semiconductors form a continuous allo...

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书目详细资料
主要作者:	Hassan, Zainuriah
格式:	Conference or Workshop Item
语言:	English
出版:	2016
主题:	QC1-999 Physics
在线阅读:	http://eprints.usm.my/48801/1/ZO8.pdf%20done.pdf http://eprints.usm.my/48801/
标签:	添加标签没有标签, 成为第一个标记此记录!

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