Fabrication of lnxGa1-xN/GaN Multi-Quantum Well Structure for Green Light Emitting Diode on Patterned Sapphire Substrate by Metal Organic Chemical Vapour Deposition
In an effort to successfully fabricate lnGaN-based for green emitting devices on patterned sapphire substrate, the indium composition in lnxGa1-xN/GaN multi-quantum well structure is crucial because lower indium composition will shift the wavelength towards ultraviolet region. In this study, 4 micr...
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| Main Authors: | , , , |
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| 格式: | Conference or Workshop Item |
| 语言: | English |
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| 在线阅读: | http://eprints.usm.my/48819/1/ZH17_OP010.pdf%20done.pdf http://eprints.usm.my/48819/ |
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