Influence Of Growth Temperature Of PGaN Layer On The Characteristics Of InGaN/GaN Blue Light Emitting Diodes
InGaN/GaN blue light-emitting diodes (LEDs) have been successfully growth via metal organic chemical vapor deposition (MOCVD) in temperature range 920 to 1020 °C growth temperatures for p-GaN layer. The significant of p-GaN growth temperature are studied in detail according to the electrical, optica...
保存先:
| 主要な著者: | , |
|---|---|
| フォーマット: | Conference or Workshop Item |
| 言語: | English |
| 出版事項: |
2020
|
| 主題: | |
| オンライン･アクセス: | http://eprints.usm.my/48919/1/MNRG_MA01.pdf http://eprints.usm.my/48919/ |
| タグ: |
タグ追加
タグなし, このレコードへの初めてのタグを付けませんか!
|