Fabrication of lnxGa1-xN/GaN Multi-Quantum Well Structure for Green Light Emitting Diode on Patterned Sapphire Substrate by Metal Organic Chemical Vapour Deposition

• المؤلفون الرئيسيون: Rais, Shamsul Amir Abdul, Najiha, Hayatun, Hassan, Zainuriah, Shuhaimi, Ahmad
• التنسيق: Conference or Workshop Item
• اللغة: English
• الموضوعات: QC1-999 Physics
• الوصول للمادة أونلاين: http://eprints.usm.my/48819/1/ZH17_OP010.pdf%20done.pdf; http://eprints.usm.my/48819/

In an effort to successfully fabricate lnGaN-based for green emitting devices on patterned sapphire substrate, the indium composition in lnxGa1-xN/GaN multi-quantum well structure is crucial because lower indium composition will shift the wavelength towards ultraviolet region. In this study, 4 micr...