Influence Of Growth Temperature Of PGaN Layer On The Characteristics Of InGaN/GaN Blue Light Emitting Diodes
InGaN/GaN blue light-emitting diodes (LEDs) have been successfully growth via metal organic chemical vapor deposition (MOCVD) in temperature range 920 to 1020 °C growth temperatures for p-GaN layer. The significant of p-GaN growth temperature are studied in detail according to the electrical, optica...
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| Main Authors: | , |
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| 格式: | Conference or Workshop Item |
| 语言: | English |
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2020
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| 在线阅读: | http://eprints.usm.my/48919/1/MNRG_MA01.pdf http://eprints.usm.my/48919/ |
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