Improved performance of InGaN/GaN LED by optimizing the properties of the bulk and interface of ITO on p-GaN
Indium Tin Oxide films were deposited directly on p-type Gallium Nitride film using the electron beam deposition method at different substrate temperatures from 25 degrees C to 550 degrees C. The structural, optical and Hall measurements represent a direct correlation of ITO properties with the subs...
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| Main Authors: | , , , , , , , , |
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| 格式: | Article |
| 出版: |
Elsevier
2021
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| 在线阅读: | http://eprints.um.edu.my/34301/ |
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