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Improved performance of InGaN/GaN LED by optimizing the properties of the bulk and interface of ITO on p-GaN

Indium Tin Oxide films were deposited directly on p-type Gallium Nitride film using the electron beam deposition method at different substrate temperatures from 25 degrees C to 550 degrees C. The structural, optical and Hall measurements represent a direct correlation of ITO properties with the subs...

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书目详细资料
Main Authors:	Zahir, Norhilmi, Talik Sisin, Noor Azrina, Harun, Hazmi Naim, Kamarundzaman, Anas, Tunmee, Sarayut, Nakajima, Hideki, Chanlek, Narong, Shuhaimi, Ahmad, Majid, Wan Haliza Abd
格式:	Article
出版:	Elsevier 2021
主题:	QC Physics
在线阅读:	http://eprints.um.edu.my/34301/
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