Effect Of GaN Nucleation Layer Temperature On Structural And Morphological Properties Of Ud-GaN Template Grown On Pss

• المؤلفون الرئيسيون: Ahmad, M. A., Hamzah, N. A., Asri1, R. I. M., Zainal, N., Hassan, Z.
• التنسيق: Conference or Workshop Item
• اللغة: English
• منشور في: 2019
• الموضوعات: QC1-999 Physics
• الوصول للمادة أونلاين: http://eprints.usm.my/48841/1/ICoSeMT%202019%20ABSTRACT%20BOOK%20102.pdf; http://eprints.usm.my/48841/

In this study, the role of nucleation layer temperature on the ud-GaN crystal quality grown on cone-patterned sapphire substrate (PSS) by metalorganic chemical vapor deposition (MOCVD) was explored. To do this, the crystal qualities of bulk GaN were characterized by rocking curves of (002) and (102)...