Effect Of GaN Nucleation Layer Temperature On Structural And Morphological Properties Of Ud-GaN Template Grown On Pss

• 主要な著者: Ahmad, M. A., Hamzah, N. A., Asri1, R. I. M., Zainal, N., Hassan, Z.
• フォーマット: Conference or Workshop Item
• 言語: English
• 出版事項: 2019
• 主題: QC1-999 Physics
• オンライン･アクセス: http://eprints.usm.my/48841/1/ICoSeMT%202019%20ABSTRACT%20BOOK%20102.pdf; http://eprints.usm.my/48841/

In this study, the role of nucleation layer temperature on the ud-GaN crystal quality grown on cone-patterned sapphire substrate (PSS) by metalorganic chemical vapor deposition (MOCVD) was explored. To do this, the crystal qualities of bulk GaN were characterized by rocking curves of (002) and (102)...