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Effect Of Nucleation Time On GaN Layer Grown On Different Shape Of Patterned Sapphire Substrate

This work describes the effect of nucleation time on GaN layer; which was grown separately on three different shape of patterned sapphire substrate (PSS); cone PSS and dome PSS. Prior to the GaN layer growth, a low temperature of GaN nucleation layer was initially grown at 40, 80 and 160 second. Th...

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主要な著者: Taib, Muhamad Ikram Md, Zaini, Siti Nurul Waheeda Mohmad, Zainal, Norzaini
フォーマット: Conference or Workshop Item
言語:English
出版事項: 2020
主題:
QC1-999 Physics
オンライン･アクセス:http://eprints.usm.my/49045/1/ABSTRACT%20BOOK%20MNRG%202020.pdf%20cut%2050.pdf
http://eprints.usm.my/49045/
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spelling my.usm.eprints.49045 http://eprints.usm.my/49045/ Effect Of Nucleation Time On GaN Layer Grown On Different Shape Of Patterned Sapphire Substrate Taib, Muhamad Ikram Md Zaini, Siti Nurul Waheeda Mohmad Zainal, Norzaini QC1-999 Physics This work describes the effect of nucleation time on GaN layer; which was grown separately on three different shape of patterned sapphire substrate (PSS); cone PSS and dome PSS. Prior to the GaN layer growth, a low temperature of GaN nucleation layer was initially grown at 40, 80 and 160 second. The nucleation islands became larger as the nucleation time was longer. Bigger islands promote better coalescence, while smaller islands showed otherwise. Besides, the GaN layer grown on bigger islands exhibit smoother surface. From XRD measurement, FWHM of the GaN peak decreased for longer nucleation time, indicating the benefit of bigger islands to reduce the dislocations in the layer through better coalescence. It was found that the GaN layer grown on dome-patterned substrate exhibits better quality than the one on cone-patterned substrate. The growth of GaN layer on flat sapphire was also performed for comparison. 2020-12-02 Conference or Workshop Item PeerReviewed application/pdf en http://eprints.usm.my/49045/1/ABSTRACT%20BOOK%20MNRG%202020.pdf%20cut%2050.pdf Taib, Muhamad Ikram Md and Zaini, Siti Nurul Waheeda Mohmad and Zainal, Norzaini (2020) Effect Of Nucleation Time On GaN Layer Grown On Different Shape Of Patterned Sapphire Substrate. In: 5th Meeting of Malaysia Nitrides Research Group (MNRG 2020), 1-2 December 2020.
institution Universiti Sains Malaysia
building Hamzah Sendut Library
collection Institutional Repository
continent Asia
country Malaysia
content_provider Universiti Sains Malaysia
content_source USM Institutional Repository
url_provider http://eprints.usm.my/
language English
topic QC1-999 Physics
spellingShingle QC1-999 Physics
Taib, Muhamad Ikram Md
Zaini, Siti Nurul Waheeda Mohmad
Zainal, Norzaini
Effect Of Nucleation Time On GaN Layer Grown On Different Shape Of Patterned Sapphire Substrate
description This work describes the effect of nucleation time on GaN layer; which was grown separately on three different shape of patterned sapphire substrate (PSS); cone PSS and dome PSS. Prior to the GaN layer growth, a low temperature of GaN nucleation layer was initially grown at 40, 80 and 160 second. The nucleation islands became larger as the nucleation time was longer. Bigger islands promote better coalescence, while smaller islands showed otherwise. Besides, the GaN layer grown on bigger islands exhibit smoother surface. From XRD measurement, FWHM of the GaN peak decreased for longer nucleation time, indicating the benefit of bigger islands to reduce the dislocations in the layer through better coalescence. It was found that the GaN layer grown on dome-patterned substrate exhibits better quality than the one on cone-patterned substrate. The growth of GaN layer on flat sapphire was also performed for comparison.
format Conference or Workshop Item
author Taib, Muhamad Ikram Md
Zaini, Siti Nurul Waheeda Mohmad
Zainal, Norzaini
author_facet Taib, Muhamad Ikram Md
Zaini, Siti Nurul Waheeda Mohmad
Zainal, Norzaini
author_sort Taib, Muhamad Ikram Md
title Effect Of Nucleation Time On GaN Layer Grown On Different Shape Of Patterned Sapphire Substrate
title_short Effect Of Nucleation Time On GaN Layer Grown On Different Shape Of Patterned Sapphire Substrate
title_full Effect Of Nucleation Time On GaN Layer Grown On Different Shape Of Patterned Sapphire Substrate
title_fullStr Effect Of Nucleation Time On GaN Layer Grown On Different Shape Of Patterned Sapphire Substrate
title_full_unstemmed Effect Of Nucleation Time On GaN Layer Grown On Different Shape Of Patterned Sapphire Substrate
title_sort effect of nucleation time on gan layer grown on different shape of patterned sapphire substrate
publishDate 2020
url http://eprints.usm.my/49045/1/ABSTRACT%20BOOK%20MNRG%202020.pdf%20cut%2050.pdf
http://eprints.usm.my/49045/
_version_ 1698697786815414272
score 13.252575

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