Effects Of Three-Step Magnesium Doping In p-GaN Layer On The Properties Of InGaN Based Light Emitting Diode

• المؤلفون الرئيسيون: Hamzah, Nur Atiqah, Asri, Rahil Izzati Mohd, Ahmad, Mohd Anas, Ng, Sha Shiong, Hassan, Zainuriah
• التنسيق: Conference or Workshop Item
• اللغة: English
• منشور في: 2020
• الموضوعات: QC1-999 Physics
• الوصول للمادة أونلاين: http://eprints.usm.my/49058/1/ABSTRACT%20BOOK%20MNRG%202020.pdf%20cut%2055.pdf; http://eprints.usm.my/49058/

In this works, indium gallium nitride (InGaN) based light emitting diode (LED) was grown on a 4-inch c-plane patterned sapphire substrate using metal-organic chemical vapor deposition. Three-step magnesium (Mg) doping profile was proposed to enhance the efficiency of the LED and the attention was p...