Effects Of Three-Step Magnesium Doping In p-GaN Layer On The Properties Of InGaN Based Light Emitting Diode
In this works, indium gallium nitride (InGaN) based light emitting diode (LED) was grown on a 4-inch c-plane patterned sapphire substrate using metal-organic chemical vapor deposition. Three-step magnesium (Mg) doping profile was proposed to enhance the efficiency of the LED and the attention was p...
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| Main Authors: | , , , , |
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| 格式: | Conference or Workshop Item |
| 语言: | English |
| 出版: |
2020
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| 主题: | |
| 在线阅读: | http://eprints.usm.my/49058/1/ABSTRACT%20BOOK%20MNRG%202020.pdf%20cut%2055.pdf http://eprints.usm.my/49058/ |
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