A CMOS-MEMS Nano-Newton Force Sensor for Biomedical Applications
This paper reports the design and microfabrication of a CMOS-MEMS capacitive force sensor capable of nano-Newton out-of-plane force measurement. Sidewall and fringe capacitance formed by the multiple CMOS metal layers were utilized and fully differential sensing was enabled by common-centroid wiring...
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| 主要な著者: | , |
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| フォーマット: | Conference or Workshop Item |
| 出版事項: |
2010
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| オンライン･アクセス: | http://eprints.utp.edu.my/3442/1/A_CMOS-MEMS_Nano-Newton_Force_Sensor_for_Biomedical_Applications.pdf http://eprints.utp.edu.my/3442/ |
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| 要約: | This paper reports the design and microfabrication of a CMOS-MEMS capacitive force sensor capable of nano-Newton out-of-plane force measurement. Sidewall and fringe capacitance formed by the multiple CMOS metal layers were utilized and fully differential sensing was enabled by common-centroid wiring of the sensing capacitors. Single-crystal silicon (SCS) is incorporated in the entire sensing element for robust structures and reliable sensor deployment in force measurement. A sensitivity of 0.02fF/nN in a measurable force range 2 pN to 1 mN is predicted. The minimum detection force is 2.8 pN. The CMOS-MEMS force sensor features easy post-CMOS microfabrication in which directional SiO2 reactive ion etching (RIE) and silicon deep reactive ion etching (DRIE) are employed. |
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