表紙画像

Studies on Transition Metal Impregnated Mx(lnGa)1_XN modulated structures for wide band gap multi-junction Solar cells.

GaN and Ga-rich InGaN have been considered as the most important and indispensable materials used for the fabrication of efficient thin film solar cells which are active in entire visible and part of the near UV spectral regions. Initially, Al doped Ga203 thin film was synthesized using staking me...

保存先:

書誌詳細
第一著者:	Devarajan, Mutharasu
フォーマット:	Monograph
出版事項:	Universiti Sains Malaysia 2013
主題:	QC1-999 Physics
オンライン･アクセス:	http://eprints.usm.my/32555/
タグ:	タグ追加タグなし, このレコードへの初めてのタグを付けませんか!

類似資料

Structural and Optical Properties of Ultra-high Pure Hot Water Processed Ga2O3 Thin Film
著者:: Subramani, Shanmugan, 等
出版事項: (2016)

Simulation model of multi-junction InxGa1-xN solar cells
著者:: Wisam, J. Aziz, 等
出版事項: (2016)

Effect of structural design on lnGaN based green LEOs with AIGaN cap layer
著者:: Taib, M. l. Md, 等
出版事項: (2017)

Structural And Optical Studies Of Wide Band-Gap AlxGa1-xN (0 ≤ x ≤ 1) Semiconductors [TK7871.85. N577 2007 f rb].
著者:: Ng, Sha Shiong
出版事項: (2007)

Fabrication of lnxGa1-xN/GaN Multi-Quantum Well Structure for Green Light Emitting Diode on Patterned Sapphire Substrate by Metal Organic Chemical Vapour Deposition
著者:: Rais, Shamsul Amir Abdul, 等

Effect of lattice constant on band-gap energy and optimization and stabilization of high-temperature In xGa 1 -xN quantum-dot lasers
著者:: Humayun, M. A., 等
出版事項: (2013)

Ultra wide band antenna with electromagnetic band gap structure
著者:: Wan Khairul Anwar, Bin Wan Md Marzuki
出版事項: (2010)

Electromagnetic band gap structure for planar ultra wide band antenna
著者:: Masri, T., 等
出版事項: (2010)

Dft investigations of the structural and electronic properties of xn (al, ga, in) compounds
著者:: Saeed, Mohammad Alam, 等
出版事項: (2015)

An SEM flashover: technique to characterize wide band gap insulators
著者:: Sutjipto, Agus Geter Edy, 等
出版事項: (2006)

First-principles study of cubic BxGa1-xN alloys
著者:: Lachebi, A., 等
出版事項: (2008)

Dual band microstrip arrays and ultra wide band antennas with electromagnetic band gap structures
著者:: Masri, Thelaha
出版事項: (2009)

Effective Index Method Applied on a GaN/InxGa1-XN Integrated Optics Waveguide
著者:: Meriem Berrouane, Wassila, 等
出版事項: (2018)

Wide band open ended air gap RLSA antenna at 26ghz frequency band
著者:: Mohd Ibrahim, Imran, 等
出版事項: (2013)

Wide Band Open Ended Air Gap RLSA Antenna at 26GHz Frequency Band
著者:: Mohd Ibrahim, Imran
出版事項: (2013)

Enhancement Of Efficiency Of GaN-On-GaN Led By Wet Etching Roughening On N-Face GaN Substrate
著者:: Alias, Ezzah A., 等
出版事項: (2020)

Wide Band Open Ended Air Gap RLSA Antenna at 5.8GHz Frequency Band
著者:: Mohd Ibrahim, Imran
出版事項: (2012)

Comparison Of Front - And Back - Junctions Monocrystalline Silicon Solar Cell
著者:: Bagudo, Ibrahim Muhammad
出版事項: (2008)

Range FFT for INDERA MX-2
著者:: Lestari, A. A., 等
出版事項: (2009)

Study Of Cubic GaN On Porous GaAs Substrate For High Efficient Energy Devices.
著者:: Zainal, Norzaini
出版事項: (2016)

Efficiency Droop Of InGaN/GaN Led With Different Indium Composition
著者:: Samsudin, M. E. A., 等
出版事項: (2019)

Study of structural and optical properties of nanostructured wide band gap ternary alloy semiconductor.
著者:: Hassan, Zainuriah
出版事項: (2015)

Doping effect numerical comparison of band gap energy and active region range for GaN and GaAs based semiconductor
著者:: Faris Azim Ahmad Fajri, Faris Azim, 等
出版事項: (2021)

Doping effect numerical comparison of band gap energy and active region range for GaN and GaAs based semiconductor
著者:: Ahmad Fajri, Faris Azim, 等
出版事項: (2021)

XRD analyses of InxGa1-xN (0.20 x 0.80) ternary alloys
著者:: Yushamdan, Yusof, 等
出版事項: (2010)

Infrared optical responses of wurtzite InxGa1 − xN thin films with porous surface morphology
著者:: Yew, P., 等
出版事項: (2016)

The Role Of Growth Temperature On The Indium Incorporation Process For Mocvd Growth Of InGaN/GaN Heterostructures
著者:: Yusof, Ahmad Sauffi, 等
出版事項: (2020)

The Role Of Growth Temperature On The Indium Incorporation Process For Mocvd Growth Of InGaN/GaN Heterostructures
著者:: Yusof, Ahmad Sauffi, 等
出版事項: (2020)

Enhancement Of Efficiency Of GaN-on-GaN LED By Wet Etching Roughening On N-Face Gan Substrate
著者:: Alias, Ezzah A., 等
出版事項: (2020)

Optimum prevention and MX of anaemia in primary care
著者:: Jamani, Nurjasmine Aida
出版事項: (2017)

Effect Of GaN Nucleation Layer Temperature On Structural And Morphological Properties Of Ud-GaN Template Grown On Pss
著者:: Ahmad, M. A., 等
出版事項: (2019)

Innovative Developments in GaN-based Technology
著者:: Hassan, Zainuriah
出版事項: (2016)

Synthesis and characterization of MX2 and exfolation MX2 (M=Mo ,W; X = O, S, Se and Te) and their electrochemical properties
著者:: Poh, Yi Fei
出版事項: (2016)

Optimization of Post-Annealing NH3 Temperature for GaN Growth on GaAs (100) Substrate via Electron Beam Evaporator
著者:: Taib, M. lkram Md, 等
出版事項: (2015)

Influence Of Growth Temperature Of PGaN Layer On The Characteristics Of InGaN/GaN Blue Light Emitting Diodes
著者:: Asri, R. I. M., 等
出版事項: (2020)

Influence Of Growth Temperature Of PGaN Layer On The Characteristics Of InGaN/GaN Blue Light Emitting Diodes
著者:: Asri, R. I. M, 等
出版事項: (2020)

Simulation on the roles of the number of quantum well and doping in InxGa1-xN Multiple Quantum Wells LEDs
著者:: Zainal, N., 等
出版事項: (2014)

Effects Of Three-Step Magnesium Doping In p-GaN Layer On The Properties Of InGaN Based Light Emitting Diode
著者:: Hamzah, Nur Atiqah, 等
出版事項: (2020)

Effects Of Three-Step Magnesium Doping In p-GaN Layer On The Properties Of InGaN Based Light Emitting Diode
著者:: Hamzah, Nur Atiqah, 等
出版事項: (2020)

A Study on Aperture Slot Size Effect to Wide Band Open Air Gap RLSA Performance
著者:: Imran , Mohd Ibrahim, 等
出版事項: (2013)