Fabrication of Porous GaN using Bottom-Up Approached through Electron Beam Evaporator for High Efficient Devices

• Main Authors: Samsudin, M. E. A., Zainal, N., Hassan, Z.
• 格式: Conference or Workshop Item
• 语言: English
• 出版: 2015
• 主题: QC1-999 Physics
• 在线阅读: http://eprints.usm.my/48738/1/Section%20C%20159.pdf%20cut.pdf; http://eprints.usm.my/48738/

In recent years, the use of porous semiconductor has become an alternative way in reducing the impact of lattice mismatch and propagation of threading dislocations into the overgrown layer. Porous GaN materials have been considered as one of the most promising materials for optoelectronic applica...