Fabrication of Porous GaN using Bottom-Up Approached through Electron Beam Evaporator for High Efficient Devices

• 主要な著者: Samsudin, M. E. A., Zainal, N., Hassan, Z.
• フォーマット: Conference or Workshop Item
• 言語: English
• 出版事項: 2015
• 主題: QC1-999 Physics
• オンライン･アクセス: http://eprints.usm.my/48738/1/Section%20C%20159.pdf%20cut.pdf; http://eprints.usm.my/48738/

In recent years, the use of porous semiconductor has become an alternative way in reducing the impact of lattice mismatch and propagation of threading dislocations into the overgrown layer. Porous GaN materials have been considered as one of the most promising materials for optoelectronic applica...