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Fabrication of Porous GaN using Bottom-Up Approached through Electron Beam Evaporator for High Efficient Devices

In recent years, the use of porous semiconductor has become an alternative way in reducing the impact of lattice mismatch and propagation of threading dislocations into the overgrown layer. Porous GaN materials have been considered as one of the most promising materials for optoelectronic applica...

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主要な著者: Samsudin, M. E. A., Zainal, N., Hassan, Z.
フォーマット: Conference or Workshop Item
言語:English
出版事項: 2015
主題:
QC1-999 Physics
オンライン･アクセス:http://eprints.usm.my/48738/1/Section%20C%20159.pdf%20cut.pdf
http://eprints.usm.my/48738/
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spelling my.usm.eprints.48738 http://eprints.usm.my/48738/ Fabrication of Porous GaN using Bottom-Up Approached through Electron Beam Evaporator for High Efficient Devices Samsudin, M. E. A. Zainal, N. Hassan, Z. QC1-999 Physics In recent years, the use of porous semiconductor has become an alternative way in reducing the impact of lattice mismatch and propagation of threading dislocations into the overgrown layer. Porous GaN materials have been considered as one of the most promising materials for optoelectronic applications owing to their unique optical and electronic properties. Such materials exhibit efficient luminescence, good suppression of threading dislocations and strain which subsequently high-quality and stress-free GaN layer could be develop. The fabrication of porous GaN is typically prepared using top-down approach, for example through electrochemical etching. However, such technique is commonly damaging the surface structure of the GaN as well as giving high possibility to formation of non-stoichiometric condition on the surface. Here, we demonstrate the fabrication of porous GaN layer on porous Si substrate via electron beam evaporator (e-beam). Towards the end, the best porous GaN is proposed. 2015-06-09 Conference or Workshop Item PeerReviewed application/pdf en http://eprints.usm.my/48738/1/Section%20C%20159.pdf%20cut.pdf Samsudin, M. E. A. and Zainal, N. and Hassan, Z. (2015) Fabrication of Porous GaN using Bottom-Up Approached through Electron Beam Evaporator for High Efficient Devices. In: 2nd Meeting of Malaysia Nitrides Research Group (MNRG 2015).
institution Universiti Sains Malaysia
building Hamzah Sendut Library
collection Institutional Repository
continent Asia
country Malaysia
content_provider Universiti Sains Malaysia
content_source USM Institutional Repository
url_provider http://eprints.usm.my/
language English
topic QC1-999 Physics
spellingShingle QC1-999 Physics
Samsudin, M. E. A.
Zainal, N.
Hassan, Z.
Fabrication of Porous GaN using Bottom-Up Approached through Electron Beam Evaporator for High Efficient Devices
description In recent years, the use of porous semiconductor has become an alternative way in reducing the impact of lattice mismatch and propagation of threading dislocations into the overgrown layer. Porous GaN materials have been considered as one of the most promising materials for optoelectronic applications owing to their unique optical and electronic properties. Such materials exhibit efficient luminescence, good suppression of threading dislocations and strain which subsequently high-quality and stress-free GaN layer could be develop. The fabrication of porous GaN is typically prepared using top-down approach, for example through electrochemical etching. However, such technique is commonly damaging the surface structure of the GaN as well as giving high possibility to formation of non-stoichiometric condition on the surface. Here, we demonstrate the fabrication of porous GaN layer on porous Si substrate via electron beam evaporator (e-beam). Towards the end, the best porous GaN is proposed.
format Conference or Workshop Item
author Samsudin, M. E. A.
Zainal, N.
Hassan, Z.
author_facet Samsudin, M. E. A.
Zainal, N.
Hassan, Z.
author_sort Samsudin, M. E. A.
title Fabrication of Porous GaN using Bottom-Up Approached through Electron Beam Evaporator for High Efficient Devices
title_short Fabrication of Porous GaN using Bottom-Up Approached through Electron Beam Evaporator for High Efficient Devices
title_full Fabrication of Porous GaN using Bottom-Up Approached through Electron Beam Evaporator for High Efficient Devices
title_fullStr Fabrication of Porous GaN using Bottom-Up Approached through Electron Beam Evaporator for High Efficient Devices
title_full_unstemmed Fabrication of Porous GaN using Bottom-Up Approached through Electron Beam Evaporator for High Efficient Devices
title_sort fabrication of porous gan using bottom-up approached through electron beam evaporator for high efficient devices
publishDate 2015
url http://eprints.usm.my/48738/1/Section%20C%20159.pdf%20cut.pdf
http://eprints.usm.my/48738/
_version_ 1696977043890110464
score 13.252575

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