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Innovative Developments in GaN-based Technology

GaN-based materials have been intensively investigated in recent years because of their potential applications for optoelectronic devices operating in the short wavelength spectral range and in high power, and high temperature electronic devices. The III-nitride semiconductors form a continuous allo...

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書誌詳細
第一著者:	Hassan, Zainuriah
フォーマット:	Conference or Workshop Item
言語:	English
出版事項:	2016
主題:	QC1-999 Physics
オンライン･アクセス:	http://eprints.usm.my/48801/1/ZO8.pdf%20done.pdf http://eprints.usm.my/48801/
タグ:	タグ追加タグなし, このレコードへの初めてのタグを付けませんか!

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