Innovative Developments in GaN-based Technology
GaN-based materials have been intensively investigated in recent years because of their potential applications for optoelectronic devices operating in the short wavelength spectral range and in high power, and high temperature electronic devices. The III-nitride semiconductors form a continuous allo...
Saved in:
主要作者: | Hassan, Zainuriah |
---|---|
格式: | Conference or Workshop Item |
語言: | English |
出版: |
2016
|
主題: | |
在線閱讀: | http://eprints.usm.my/48801/1/ZO8.pdf%20done.pdf http://eprints.usm.my/48801/ |
標簽: |
添加標簽
沒有標簽, 成為第一個標記此記錄!
|
相似書籍
-
Enhancement Of Efficiency Of GaN-On-GaN Led By Wet Etching Roughening On N-Face GaN Substrate
由: Alias, Ezzah A., et al.
出版: (2020) -
Enhancement Of Efficiency Of GaN-on-GaN LED By Wet Etching Roughening On N-Face Gan Substrate
由: Alias, Ezzah A., et al.
出版: (2020) -
Effects Of Three-Step Magnesium Doping In p-GaN Layer On The Properties Of InGaN Based Light Emitting Diode
由: Hamzah, Nur Atiqah, et al.
出版: (2020) -
Effects Of Three-Step Magnesium Doping In p-GaN Layer On The Properties Of InGaN Based Light Emitting Diode
由: Hamzah, Nur Atiqah, et al.
出版: (2020) -
The Role Of Growth Temperature On The Indium Incorporation Process For Mocvd Growth Of InGaN/GaN Heterostructures
由: Yusof, Ahmad Sauffi, et al.
出版: (2020)