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Fabrication of Porous GaN using Bottom-Up Approached through Electron Beam Evaporator for High Efficient Devices

In recent years, the use of porous semiconductor has become an alternative way in reducing the impact of lattice mismatch and propagation of threading dislocations into the overgrown layer. Porous GaN materials have been considered as one of the most promising materials for optoelectronic applica...

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书目详细资料
Main Authors:	Samsudin, M. E. A., Zainal, N., Hassan, Z.
格式:	Conference or Workshop Item
语言:	English
出版:	2015
主题:	QC1-999 Physics
在线阅读:	http://eprints.usm.my/48738/1/Section%20C%20159.pdf%20cut.pdf http://eprints.usm.my/48738/
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